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| NP-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.3 (max) NUltra High-Speed Switching NGate Protect Diode Built-in NSOT-23 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP152A12C0MR is a P-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. Low on-state resistance : Rds (on) = 0.3 ( Vgs = -4.5V ) : Rds (on) = 0.5 ( Vgs = -2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : -2.5V High density mounting : SOT-23 11 PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Tch Tstg 150 -55 ~ 150 SYMBOL Vdss Vgss Id Idp Idr Pd RATINGS -20 + 12 -0.7 -2.8 -0.7 0.5 Ta=25 OC UNITS V V A A A W O C C O ( note ) : When implemented on a ceramic PCB 830 DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = - 20V , Vgs = 0V Vgs = 12V , Vds = 0V Id = -1mA , Vds = - 10V Id = - 0.4A , Vgs = - 4.5V Id = - 0.4A , Vgs = - 2.5V Id = - 0.4A , Vds = - 10V If = - 0.7A , Vgs = 0V - 0.5 0.23 0.37 1.5 -0.8 - 1.1 MIN TYP MAX - 10 10 Ta=25C UNITS A A V S V - 1.2 0.3 0.5 Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = - 10V , Vgs = 0V f = 1 MHz MIN TYP 180 120 60 MAX Ta=25C UNITS pF pF pF Switching Characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = - 5V , Id = - 0.4A Vdd = - 10V CONDITIONS MIN TYP 5 20 55 70 MAX Ta=25C UNITS ns ns ns ns Thermal Characteristics PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a ceramic PCB MIN TYP 250 MAX UNITS C / W 11 831 DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE DRAIN CURRENT vs. GATE-SOURCE VOLTAGE DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 11 DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE 832 Single Pulse 11 833 |
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